Hestia Power Inc. is the leading company which focus on WBG (Wide Band-Gap) power semiconductor technologies.
Hestia Power Inc. is a fabless design house and founded in 2013 in Hsinchu, Taiwan, involving in the research and development activities of SiC (Silicon Carbide) & GaN (Gallium Nitride) related power semiconductors for more than 15 years.
From materials to products, Hestia Power Inc. has unique technology and ability with self-owned intellectual properties of WBG power semiconductor products, to support customers to improve the efficiency of power and reach an eco-friendly tomorrow.
At Hestia Power Inc., we are committed to ongoing advancement of the efficiency and quality of our products, as well as to aiding our customers in their efforts to accelerate high performance and reliable power electronic systems.

SiC Power Semiconductor

Silicon Carbide(SiC) devices can operate in high temperature environment due to SiC material have high thermal conductivity properties.
SiC schottky diode can reach almost zero reverse recovery,
it's suitable for high effiency applications. SiC power device make miniaturization of eletrical power system.

GaN Power Semiconductor

Gallium Nitride(GaN) is the one of the most popular material in the next generation of power semiconductor.
GaN has feature of the fast switching characteristic as high frequency.
Realized the high power density and new posible power design. GaN has a potential development in the future.

Wide Band-Gap Power Module

Wide Band-Gap power modules enhance the design flexibility of renewable energy and automotive applications.
Provided outstanding electrical performance, high current application, system minimize..etc of flexibility for designers.
Hestia Power's SiC Power Modules in a variety topologies, rating current, voltage level are used in high efficiency power solutions.